Littelfuse introduces IX4352NE low side gate drivers for SiC MOSFETs and high power IGBTs

IXYS, a global leader in power semiconductors, has launched a groundbreaking new driver designed to power silicon carbide (SiC) MOSFETs and high-power insulated gate bipolar transistors (IGBTs) in industrial applications. The innovative IX4352NE driver is designed to provide customized turn-on and turn-off timing, effectively minimizing switching losses and enhancing dV/dt immunity.

The IX4352NE driver is an industry game changer, offering a range of advantages for industrial applications. It is ideally suited for driving SiC MOSFETs in a variety of settings, including on-board and off-board chargers, power factor correction (PFC), DC/DC converters, motor controllers and industrial power inverters. This versatility makes it a valuable asset in a variety of industrial applications where efficient, reliable power management is critical.

One of the key features of the IX4352NE driver is the ability to provide customized turn-on and turn-off timing. This feature enables precise control of the switching process, minimizing losses and increasing overall efficiency. By optimizing the timing of switching transitions, the driver ensures that the power semiconductors operate at optimal performance, thereby increasing energy efficiency and reducing heat generation.

In addition to precise timing control, the IX4352NE driver provides enhanced dV/dt immunity. This feature is especially important in high-power applications, where rapid voltage changes can cause voltage spikes and cause potential damage to semiconductors. By providing strong dV/dt immunity, the driver ensures reliable and safe operation of SiC MOSFETs and IGBTs in industrial environments, even in the face of challenging voltage transients.

The introduction of the IX4352NE driver represents a significant advancement in power semiconductor technology. Its customized turn-on and turn-off timing combined with enhanced dV/dt immunity make it ideal for industrial applications where efficiency, reliability and performance are critical. The IX4352NE driver is capable of driving SiC MOSFETs in a variety of industrial environments and is expected to have a lasting impact on the power electronics industry.

Additionally, the driver’s compatibility with a variety of industrial applications, including onboard and offboard chargers, power factor correction, DC/DC converters, motor controllers and industrial power inverters, highlights its versatility and broad adoption potential. As industries continue to demand more efficient and reliable power management solutions, the IX4352NE driver is well-positioned to meet these changing needs and drive innovation in industrial power electronics.

In summary, IXYS’s IX4352NE driver represents a major leap forward in power semiconductor technology. Its customized turn-on and turn-off timing and enhanced dV/dt immunity make it ideal for driving SiC MOSFETs and IGBTs in a variety of industrial applications. With the potential to improve industrial power management efficiency, reliability and performance, the IX4352NE driver is expected to play a key role in shaping the future of power electronics.